NDS352AP
Manufacturer:
On Semiconductor
Mfr.Part #:
NDS352AP
Datasheet:
Description:
MOSFETs TO-236-3 SMD/SMT P-Channel number of channels:1 500 mW -30 V Continuous Drain Current (ID):900 mA 3 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Width | 3.05 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 500 mΩ |
| Height | 1.22 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -900 mA |
| Max Power Dissipation | 460 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | -1.7 V |
| Number of Channels | 1 |
| Input capacitance | 135 pF |
| Continuous Drain Current (ID) | 900 mA |
| Rds On Max | 300 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Fall Time | 16 ns |
| Rise Time | 16 ns |
| Dual Supply Voltage | -30 V |
| Gate Charge | 3 nC |
| Drain to Source Resistance | 500 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -1.7 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 201
Distributors
pcbx
pcbxUnit Price$0.36355
Ext.Price$0.36355
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.36355 | $0.36355 |
| 10 | $0.28627 | $2.86270 |
| 50 | $0.24857 | $12.42850 |
| 100 | $0.21583 | $21.58300 |
| 500 | $0.19749 | $98.74500 |
| 1000 | $0.18673 | $186.73000 |